IndiumV3, Main, Repository, bibRecord, 001644

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Identifieur interne : 001644 ( Main/Repository ); précédent : 001643; suivant : 001645

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Auteurs : RBID : Pascal:13-0081534

Descripteurs français

Pascal (Inist)
- Croissance film, Dépôt laser pulsé, Indium, Oxyde de zinc, Oxyde d'aluminium, Matériau dopé, Facteur transmission, Conductivité électrique, Film optique, Fissure, Défaut étendu, Dispositif optoélectronique, Couche mince transparente, 8115F, 7820C, 6855J.

English descriptors

KwdEn :
- Aluminium oxide, Cracks, Doped materials, Electrical conductivity, Extended defects, Film growth, Indium, Optical films, Optoelectronic devices, Pulsed laser deposition, Transmittance, Transparent thin film, Zinc oxide.

Abstract

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10^-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

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Pascal:13-0081534

Le document en format XML

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<country>États-Unis</country>
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<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 13-0081534 INIST</idno>
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<title level="j" type="main">Applied surface science</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxide</term>
<term>Cracks</term>
<term>Doped materials</term>
<term>Electrical conductivity</term>
<term>Extended defects</term>
<term>Film growth</term>
<term>Indium</term>
<term>Optical films</term>
<term>Optoelectronic devices</term>
<term>Pulsed laser deposition</term>
<term>Transmittance</term>
<term>Transparent thin film</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Croissance film</term>
<term>Dépôt laser pulsé</term>
<term>Indium</term>
<term>Oxyde de zinc</term>
<term>Oxyde d'aluminium</term>
<term>Matériau dopé</term>
<term>Facteur transmission</term>
<term>Conductivité électrique</term>
<term>Film optique</term>
<term>Fissure</term>
<term>Défaut étendu</term>
<term>Dispositif optoélectronique</term>
<term>Couche mince transparente</term>
<term>8115F</term>
<term>7820C</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10<sup>-4</sup>
 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>EMRS 2011 Fall meeting symposium on Stress, structure and stoichiometry effects on nanomaterials</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>SOCOL (G.)</s1>
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<fA11 i1="02" i2="1"><s1>SOCOL (M.)</s1>
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<fA15 i1="01"><s1>Laser Department, National Institute for Laser, Plasma and Radiation Physics</s1>
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<sZ>1 aut.</sZ>
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<fA15 i1="03"><s1>Institut Pprime, CNRS, University of Poitiers, ENSMA SP2MI</s1>
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<fC01 i1="01" l="ENG"><s0>The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10<sup>-4</sup>
 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Croissance film</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Film growth</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Pulsed laser deposition</s0>
<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Indium</s0>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0>
<s5>08</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Aluminium oxide</s0>
<s5>08</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Aluminio óxido</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>09</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>10</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>10</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Film optique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Optical films</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Fissure</s0>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Cracks</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Défaut étendu</s0>
<s5>14</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Extended defects</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Optoelectronic devices</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Couche mince transparente</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Transparent thin film</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Película transparente</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>8115F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>45</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>7820C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>06</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>06</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé de métal de transition</s0>
<s5>07</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>07</s5>
</fC07>
<fN21><s1>049</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Stress, structure, and stoichiometry effects on the properties of nanomaterials Symposium</s1>
<s3>Warsaw POL</s3>
<s4>2011-09-19</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

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